BFR460L3
Überblick
NPN Silicon RF Transistor for low voltage / low current applications
Zusammenfassung der Merkmale
- Ideal for VCO modules and low noise amplifiers
- Low noise figure: 1.1 dB at 1.8 GHz
- SMD leadless package
- Excellent ESD performance typical value 1500V (HBM)
- High fT of 22 GHz
- Pb-free (RoHS compliant) package
Potentielle Zielanwendungen
- Wireless Communications
- For amplifier and oscillator applications in RF Front-end
Support
