BC817UPN
Überblick
NPN Silicon AF Transistor Array
Zusammenfassung der Merkmale
- High current gain
- Low collector-emitter saturation voltage
- Two (galvanic) internal isolated NPN/PNP transistors in one package
- Pb-free (RoHS compliant) package
- Qualified according AEC Q101
Potentielle Zielanwendungen
- For AF stages and driver applications
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