Infineon Helps Power Supply Manufacturers Achieve Efficiency Goals; Introduces Next-Generation of Energy-Saving MOSFET Devices

Oct 24, 2006 | Market News

Munich, Germany, and Long Beach, California – October 24, 2006 – At the Power Systems World 2006 trade show today, Infineon Technologies AG (FSE/NYSE: IFX) announced its next-generation family of power semiconductors used for DC/DC converter applications in computers, telecommunications and consumer electronics devices.  The new OptiMOS ® 3 30V N-channel MOSFET family improves reliability and energy efficiency of 1 to 1.3 percent in typical power supply applications by featuring industry-leading performance in key power conversion measures, such as on-state resistance, power density and gate charge.
 
Many applications, such as power supplies for servers, notebooks, plasma- or LCD-TVs and gaming consoles, require more efficient power supplies, driven by the need to save energy and to minimize the tolerable power losses in the system in working and stand-by modes.  For example, in the US about 6 percent of electricity consumption is used by power supplies for converting the typical 110V AC voltages into the DC power needed in the individual subsystems of these electronic devices.  Approximately 10 to 20 percent of this power is wasted in the form of heat during operational mode.  
 
As the worldwide market leader in power semiconductors (IMS Research, September 2006), Infineon designed the OptiMOS 3 family of devices specifically for optimum performance in low-voltage power conversion applications.  Devices in the family typically offer 1 to 1.3 percent improvements in efficiency compared to previous generation products.  This seemingly small improvement, which is technically difficult to achieve, can result in significant annual power savings.  For example, a 1 percent improvement in 1,200 W server power systems worldwide would result in about 360 megawatts savings per year, potentially eliminating the need for one conventional power plant.
 
“The OptiMOS 3 family will help power supply designers meet the power requirements of upcoming system designs, while enabling energy savings,” said Andreas Urschitz, Senior Director of the Power Management & Supply business unit at Infineon Technologies.  “The combination of improved efficiency and switching characteristics, greater power densities and higher reliability will lead to high-performance, energy-efficient and cost-effective power supply solutions”.
 
The performance characteristics of OptiMOS 3 technology allow power supply manufacturers to achieve desired performance levels using fewer devices, resulting in a 33 percent reduction in the number of MOSFETs typically required to implement a DC/DC converter.  Infineon will also offer the devices in a new high-performance Shrink SuperSO8 (S3O8) 3 mm x 3 mm package that can yield up to a 60 percent board space savings required for MOSFETs in converter system designs.
 
In addition to providing the flexibility to develop smaller DC/DC converters for a required power rating, OptiMOS 3 devices can be used to increase the output power of a power supply at a given standard size.  Additionally, OptiMOS 3 can extend the life of batteries in notebooks, and provide energy savings in server and telecommunications systems. 
 
The N-channel OptiMOS 3 process technology yields devices with the industry’s lowest available on-resistance (R DS(on)), an outstandingly low gate charge and other characteristics that result in exceptional device performance.  For example, the best-in-class OptiMOS 3 power MOSFET in a SuperSO8 package has a maximum rated R DS(on) of only 1.6 milliohms, which is approximately 30 percent lower than the next-best similar device.  This low R DS(on) minimizes conduction losses and on-state power dissipation, allowing higher power densities.
 
The low-gate charge allows the OptiMOS 3 devices an easier drive, so less-expensive drivers can be used.  In addition, the improved figure of merit (FOM) decreases the load for the driver by 30 percent thus significantly decreasing the operating temperature of the driver by almost 10°C at 400 kHz switching frequency compared to the nearest competitor, so less energy is lost as heat.
 
Compared to the industry leading OptiMOS 2, the new OptiMOS 3 features several major improvements, including on-resistance reduction by 30 percent; a 30 percent improved FOM, while offering similar performance in a 60 percent smaller package (S3O8) compared to OptiMOS 2.
 
Availability and Pricing
 
The new OptiMOS 3 30V power MOSFET family will be available in eight package types, with a total of more than 80 devices, with differences in R DS(on), for example.  OptiMOS 3 is available now in high-volume quantities.  For example, the best-in-class BSC016N03LSG, with R DS(on) of 1.6 milliohms, is available in a SuperSO8 package at a 10,000-piece price of less than $1.00.  In a S3O8 package, the price of a 3.5 milliohms device is less than $0.70.
 
Infineon is showing its new power semiconductors and new S3O8 package in Booth #508 at the Power Systems World 2006 Trade Show October 24 - 26, 2006, in Long Beach, California.
 
For further information please turn to www.infineon.com/powermosfets.

About Infineon

Infineon Technologies AG, Munich, Germany, offers semiconductor and system solutions for automotive, industrial and multimarket sectors, for applications in communication, as well as memory products through its subsidiary Qimonda.  With a global presence, Infineon operates through its subsidiaries in the US from San Jose, CA, in the Asia-Pacific region from Singapore and in Japan from Tokyo.  In fiscal year 2005 (ending September), the company achieved sales of Euro 6.76 billion with about 36,400 employees worldwide. Infineon is listed on the DAX index of the Frankfurt Stock Exchange and on the New York Stock Exchange (ticker symbol: IFX). 
 
Further information is available at www.infineon.com . 
Further information on Qimonda is available at www.qimonda.com.

Information Number

INFAIM200610.010

Press Photos

  • Using the S3O8 package (only 3 mm x 3 mm), OptiMOS® 3 saves up to a 60 percent board space required for MOSFETs in converter system designs. The family OptiMOS 3 improves reliability and energy efficiency of DC/DC converters in computers, telecommunications and consumer electronics devices featuring industry-leading performance in key power conversion measures, such as on-state resistance, power density and gate charge. <br><br>Im S3O8-Gehäuse (nur 3 mm x 3 mm) spart OptiMOS® 3 im Spannungswandler-Design bis zu 60 Prozent Boardfläche für die MOSFETs ein. Die Leistungshalbleiter-Familie OptiMOS 3 steigert die Energieeffizienz von Netzteilen in Computern, Telekommunikationsgeräten und Konsumelektronik. Sie bietet höhere Zuverlässigkeit und industrieweit beste Leistungsmerkmale beim Einschaltwiderstand, der Leistungsdichte oder der Gate-Ladung.
    Using the S3O8 package (only 3 mm x 3 mm), OptiMOS® 3 saves up to a 60 percent board space required for MOSFETs in converter system designs. The family OptiMOS 3 improves reliability and energy efficiency of DC/DC converters in computers, telecommunications and consumer electronics devices featuring industry-leading performance in key power conversion measures, such as on-state resistance, power density and gate charge.

    Im S3O8-Gehäuse (nur 3 mm x 3 mm) spart OptiMOS® 3 im Spannungswandler-Design bis zu 60 Prozent Boardfläche für die MOSFETs ein. Die Leistungshalbleiter-Familie OptiMOS 3 steigert die Energieeffizienz von Netzteilen in Computern, Telekommunikationsgeräten und Konsumelektronik. Sie bietet höhere Zuverlässigkeit und industrieweit beste Leistungsmerkmale beim Einschaltwiderstand, der Leistungsdichte oder der Gate-Ladung.
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