KIT_1EDB_AUX_GAN

Overview

Isolated Gate Driver IC with a configurable floating unipolar or bipolar auxiliary supply for GaN HEMTs

KIT_1EDB_AUX_GaN is a complete driving solution for GaN HEMTs, including an isolated Gate Driver IC and its floating auxiliary supply. The isolated auxiliary supply can support unipolar or bipolar driving with typical levels easily configurable by means of one resistor. 

The KIT_1EDB_AUX_GaN is available on request. Please contact our support.

Summary of Features

  • Up to 1.5 W output power to cover use-case scenarios with different GaN and switching frequencies
  • Optimized for bipolar driving levels typical of GaN HEMTs
  • Isolated driving solution with high CMTI for GaN HEMTs

Benefits

  • A compatible footprint allows easy plug-in in existing boards including single channel isolated gate drivers
  • Complete compact and cost optimized driving solution
  • Driving levels easily configurable by means of one resistors

Potential Applications

List of components

Complementary boards

Interactive 3D board model

Picture of 3D model kit 1edb aux gan
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Training

How to drive Infineon’s CoolGaN™ GIT HEMTs

In this eLearning you will learn about the similarities and differences of GaN power transistors compared to their silicon counterparts.

Click here to see more

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