REF-SIC-D2PAK-BP
Overview
Reference board for 1200 V CoolSiC™ MOSFET in TO263-7
This Reference Board is a drive card of the CoolSiC™ MOSFET 1200 V evaluation platform and it contains the EiceDRIVER™ 1ED Compact 1EDI20H12AH with allowing a bipolar supply, where VCC2 is +15 V and GND2 is negative.
The CoolSiC™ MOSFET 1200 V evaluation platform including EiceDRIVER™ gate driver IC was developed to show the driving options of the silicon carbide CoolSiC™ MOSFET in TO263-7pin. To show these options, the design was split into one motherboard and two drive cards for SMD. The motherboard EVAL_PS_SIC_DP_MAIN was designed for a maximum voltage of 800 V and a maximum pulsed current of 130 A.
Summary of Features
- 1200V CoolSiC™ Silicon Carbide (SiC) Trench MOSFET IMBG120R030M1H
- 1EDI20H12AH with bipolar power supply
- Core-less isolated gate drivers
- Negative turn-off gate voltage
- Utilize the Insulated Metal Substrate (IMS)
- All components Surface Mounted Devices (SMD)
Benefits
- Very low switching losses
- Benchmark gate threshold voltage, VGS(th) = 4.5 V
- Robust body diode for hard commutation
- Sense pin for optimized switching performance
- Negative turn off voltage to avoid parasitic turn on
Diagrams
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