5962R2321301VXC Infineon’s radiation hardened 2 Mb non-volatile Ferroelectric RAM (F-RAM) memory offers the utmost reliability and performance for extreme environments.

Overview

Our rad hard F-RAM is one of the industry’s lowest power, non-volatile memory solutions that is Single Event Upset (SEU) immune and virtually unlimited endurance. Infineon’s instant non-volatile write technology and greater than 100-year data retention provides the highest reliability for space applications.

Summary of Features

  • 2 Mb density (128K x 16)
  • 10-trillon read/write cycle endurance
  • 120 years data retention at +85°C
  • Extremely low programming voltage (2V)
  • Low operating current (20 mA max)
  • DLAM QML-V qualified SMD 5962-23213 --> Coming SOON!
  • Radiation performance
    • TID: > 150 Krad (Si)
    • SEL: > 96 MeV.cm2/mg [LET] @ 115°C
    • SEU: IMMUNE
    • SEFI: 5.35e-5 err/dev.day (standby mode)
    • SEFI: IMMUNE (sleep mode)

Potential Applications

  • Data logging for calibration data for satellites
  • Data storage for sensors and instruments
  • Stand-alone boot code or embedded boot code storage for microcontrollers for cube sat payloads
  • Secure key storage for data encryption
  • Direct replacement for EEPROMs
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