Space memory portfolio
Radiation hardened non-volatile and volatile memory portfolio
Rad hard, rad tol memory solutions for space, satellite applications
Our HiRel space memories are used throughout satellite sub-systems. Whether you are designing satellite payloads, buses, communications, or other spacecraft systems, our memories provide the highest reliability, highest performance, and superior radiation and single event effects (SEE) performance on the market. We adhere to the most stringent standards in the industry and are DLAM QML certified, meeting the reliability and life cycle demands for space applications.
Infineon's rad hard and rad tol memory portfolio
- Rad tol, non-volatile NOR flash: Low-pin count, high performance, industry-standard QSPI and dual QSPI interfaces for easy adoption and use
FRAM | NOR Flash | |
Density (Mb) | 2 | 256 / 512 |
Speed (MHz) / Access Time (ns) | 40 MHz / 55 ns |
133 MHz SDR |
Configurations | SPI | QSPI / Dual SPI |
Temperature Range (OC) | -55 to 125 |
-55 to 125 |
Voltage | VDD = 2.0 - 3.6 V |
VDD = 2.7 - 3.6 V |
Endurance | 10 Trillion |
1000 |
Data Retention | 11khr (125OC) |
15yrs (125OC) |
Package | 16 CSOP |
36 FP / 36 FP |
QML Certification Level | QML-V | QML-V equivalent |
Prototype Option | Yes | Yes |
Total Dose (Krad) | 150 | 30 (biased) / 150 (unbiased) |
SEL (MeV-cm2/mg) | >106 (125OC) |
>60 (80OC) |
SEU (Upsets/bit-day) | <1e-11 |
<1e-16 |
ECC Correction | Embedded | N/A |
- Rad hard, non-volatile, ferroelectric-RAM (F-RAM): Virtually infinite endurance, SEU immune with >100 year data retention making it one of the highest reliability memories for space
- Rad hard, volatile, Quad Data Rate (QDR®) synchronous SRAM: Low latency, industry-leading performance and on-chip ECC for high reliability
RADSTOP™ QDR®-II+ Synchronous SRAM | ||
Density (Mb) | 72 | 144 |
Speed (MHz) / Access Time (ns) | 250 mHz |
250 mHz |
Configurations | 4M x 18, 2M x 36 |
8M x 18, 4M x 36 |
Temperature Range (OC) | -55 to 125 |
-55 to 125 |
Voltage | VDD = 1.8V, VDDQ = 1.5V |
VDD = 1.8V, VDDQ = 1.5V |
On-Die Termination |
No | No |
Package | 165-ball CCGA |
165-ball CCGA |
QML Certification Level | QML-V |
QML-V |
Prototype Option | Yes | Yes |
Total Dose (Krad) | 300 | 200 |
SEL (MeV-cm2/mg) | >120 (125OC) |
>120 (125OC) |
SEU (Upsets/bit-day) | 1.34e-7 |
3.34e-7 |
ECC Correction | IP Controller Option |
IP Controller Option |
- Rad hard, volatile, asynchronous FAST SRAM: Industry-leading access rates and low power
RADSTOP™ Fast Async SRAM | ||
Density (Mb) | 4 | 16 |
Speed (MHz) / Access Time (ns) | 12 ns |
10 ns |
Configurations | 256k x 16, 512k x 8 |
1M x 16 / 2M x 8 / 512k x 32 |
Temperature Range (OC) | -55 to 125 |
-55 to 125 |
Voltage | VCC = 3.3V |
VDD = 1.8V - 5.0V |
Package | 36-pin CFP |
54-lead CTSOP |
QML Certification Level | QML-V |
QML-V |
Prototype Option | Yes | Yes |
Total Dose (Krad) | 300 | 200 |
SEL (MeV-cm2/mg) | 120 (125OC) |
60 (125OC) |
SEU (Upsets/bit-day) | 5e-8 |
<1e-10 |
ECC Correction | N/A |
Embedded (SECDEC) |
![Radiation Hard Products Assembled and Tested in US](/export/sites/default/_images/product/memories/Aerospace-and-Defense-Memories/QW_3.png_1069685746.png)
Radiation hard products assembled and tested in the U.S.
Wafer fabs:
Skywater, Minnesota, USA
UMC, Tainan, Taiwan
Texas Instruments, Dallas, USA
Assembly and test facilities:
DPA Components International, Simi Valley, USA
Micross Components, Orlando, USA
Infineon San Jose Test, San Jose, USA
Multiple wafer SORT and auxiliary manufacturing facilities:
Skywater, ChipMOS, KYEC for SORT
UTAC, Thailand and Integra, Milpitas, USA for laser groove and die separation
Radiation Resistance (TID, SEE)
Radiation Type | Description |
Total Dose (TID) Radiation | Resistance to permanent device damage caused by exposure to radiation (ions) over the life of the device. A trapped positive charge can result in field device turn-on. Infineon radiation-hardened SRAMs can operate up to a total dose of 300 Krad. |
Single Event Effects (SEE) | Loss of data and possible physical device damage caused by the impact of radiation particle (heavy ions, protons, or neutrons) which may result in device latch-up where a high current state is observed. |
QML-V & QML-Q Screening
QML certification is the highest standard of reliability for microcircuit devices issue by the United States government. This certification indicates that the device can be relied upon to function properly while being subjected to the harshest of conditions. Infineon’s radiation-hardened SRAMs feature both the QML-V and QML-Q certifications. | ![]() |
Datapack
Infineon offers the option of purchasing a datapack with all QML-certified products. This datapack tabulates data gathered during the part certification process including radiation data, read and record electrical data, and tri-temperature test data. The datapack is offered in both hard and soft copy formats and is matched to individual part serial numbers.
Memory Controller
Memory controllers are available free of charge for Xilinx Virtex V5, Kintex US as well as for Microchip RTG4 FPGA’s for the RadHard 72M and 144M QDRII+ SRAM devices. The QDR-II+ SRAM controllers manage the intricate timing details of a DDR-based source synchronous timing architecture and ensure reliable data traffic between the FPGA and the QDRII+ SRAM memory. Controller embedded ECC (SECDEC) is also available as an RTL option if a higher level of radiation immunity is required to mitigate single event effects. Please contact hirel-memory@infineon.com for a copy of the RTL code and test bench.
Supported Space FPGA’s
- Xilinx V5SiRF - Request Controller IP
- Xilinx Kintex KU060 - Request Controller IP
- MicroChip RTG4 - Request Controller IP
- MicroChip PolarFire - Request Controller IP
DevKit Mezzanine Cards
Board | Family | Description | Status | |
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CYDK-QDRII-NODT | Memories | QDR-II+ Synchronous SRAM mezzanine card for testing the highest performing memory for space applications This devkit board has been developed to work with the Infineon Rad Hard 72 & 144-Mbit QDR®-II+ Synchronous SRAMs. The board is developed and tested to work with FPGA carrier cards through the FMC-HPC connector. Please contact our IR HiRel Representative Office |
on request
|
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CYDK-QDRII-LA | Memories | QDR-II+ Synchronous SRAM Logic Analyzer mezzanine card for connecting a logic analyzer to debug the Rad Hard QDR®-II+ Synchronous SRAM interface to the CYDK-QDRII-NODT. This logic analyzer card has been developed to work with the Infineon CYDK-QDRII-NODT mezzanine card to provide a path to debug the interface between the FPGA and Rad Hard QDR®-II+ Synchronous SRAM. The board is developed and tested to work with FPGA carrier cards through the FMC-HPC connector. Please contact our IR HiRel Representative Office |
on request |
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CYDK-NOR | Memories | NOR Flash Boot Configuration mezzanine card for NOR Flash used as FPGA configuration memory. This devkit board has been developed to work with the Infineon Radiation Tolerant 256Mb and 512 Mb NOR Flash memory devices. The board is developed and tested to work with Xilinx FPGA carrier cards through the FMC-HPC connector. Please contact our IR HiRel Representative Office |
on request |
Supported DevKits:
Xilinx FPGA Boot Configuration Support
The QSPI and Dual QSPI NOR Flash memory devices can be programmed either through the FPGA or directly with an external SPI programmer. Details can be found in the Application Note below: