CYRS15B102Q-GGMB | Infineon offers the industry’s first radiation hardened, highly reliable, small footprint, 2 Mb non-volatile SPI Ferroelectric RAM (F-RAM) .

Overview

Our rad hard SPI F-RAM is one of the industry’s lowest power, non-volatile memory solutions that is Single Event Upset (SEU) immune and virtually unlimited endurance. Infineon’s instant non-volatile write technology and greater than 100-year data retention provides the highest reliability for space applications.

NOTE: This part is superseded by 5962R1821601VXC

Summary of Features

2 Mb density
SPI interface operating up to 25 MHz
Infineon instant non-volatile write technology
10-trillon read/write cycle endurance
120 years data retention at +85°C
Extremely low programming voltage (2V)
2.0 V–3.6 V operating voltage range
Low operating current (10 mA max)
–55°C to +125°C military temperature grade
16-pin ceramic SOP (CSOP)
DLAM QML-V qualified SMD 5962-18216, 2Mb rad hard, SPI, F-RAM (CYRS15B102Q)
Radiation performance
- TID: > 150 Krad (Si)
- SEL: > 114 MeV.cm²/mg [LET] @ 115°C
- SEU: immune
- SEFI: < 1.34 x 10^-4 err/dev.day
For flight devices, order DLAM QML-V part number 5962R1821601VXC

Potential Applications

Data logging for calibration data for satellites
Data storage for sensors and instruments
Stand-alone boot code or embedded boot code storage for microcontrollers for cube sat payloads
Secure key storage for data encryption
Replacement for serial interface NOR flash and EEPROMs