AIDK12S65C5
Overview
The 5th Generation CoolSiC™ Automotive Schottky Diode and represents Infineon leading edge technology for Silicon Carbide Schottky Barrier diodes
Thanks to a compact design and a technology based on thin wafers, this family of products shows improved efficiency over all load conditions resulting from both its thermalcharacteristics and low figure of merit (Qc x Vf). This product family has been designed to complement Infineon’s IGBT and CoolMOS™ portfolio. This ensures meeting the most stringent application requirements inthe 650V voltage class.
Summary of Features
- Revolutionary semiconductor material - Silicon Carbide
- Benchmark switching behavior
- No reverse recovery/ No forward recovery
- Temperature independent switching behavior
- High surge current capability
- Pb-free lead plating; RoHS compliant
- Junction Temperature range from -40°C to 175°C
- System efficiency improvement over Si diodes
- System cost / size savings due to reduced cooling requirements
- Enabling higher frequency / increased power density solutions
- Higher system reliability due to lower operating temperatures
- Reduced EMI
Potential Applications
- Traction inverter
- Booster / DCDC Converter
- On board Charger / PFC
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