IDW80C65D1
Overview
Rapid 1 switching 650 V, 80 A emitter controlled power silicon diodes in common cathode configuration and in a TO-247 package, allowing design optimization for more compact dimensions, easier assembly and consequently lower costs.
Summary of Features
- 1.35 V temperature-stable forward voltage (VF)
- Highest softness-factor for ultimate softness and low EMI filtering
- Lowest Irrm to provide low turn-on losses on the boost switch
- For applications switching between 18 kHz and 40 kHz
Potential Applications
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