GS-065-018-6-LR-TR CoolGaN™ power transistor 700 V G4 in PDFN with very low Rth(j-c) for high power applications and highly efficient power switching
Overview
The GS-065-018-6-LR is an enhancement-mode GaN-on-Si power transistor with properties that allow for high current, high voltage breakdown, and high switching frequency.
Housed in the bottom-side cooled PDFN package, it offers very low junction-to-case thermal resistance, making it ideal for demanding high-power applications. These features combined ensure very high efficiency in power switching.
Summary of Features
- 700 V e-mode power transistor
- 850 V transient drain-to-source voltage
- Bottom-cooled, 8x8 mm PDFN package
- RDS(on) = 62 mΩ
- IDSmax,DC = 23 A / IDSmax,Pulse = 39 A
- Ultralow FOM
- Gate drive requirements (0 V to 6 V)
- High switching frequency (> 1 MHz)
- Fast,controllable fall and rise times
- Reverse conduction capability
- Zero reverse recovery loss
Benefits
- Supports high operating frequency
- Enables highest system efficiency
- Enables ultra power density designs
- Supports BOM cost savings
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