GS-065-030-2-L-TR CoolGaN™ Transistor 650 V ≤ G3 for ultimate efficiency and reliability
Overview
The GS-065-030-2-L-TR is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. The GS-065-030-2-L-TR is a bottom-side cooled transistor in a 8x8 mm PDFN package that enables ideal power disspation as required in high power server and data center power supplies and industrial use power applications.
Summary of Features
- E-mode HEMT – normally OFF
- Ultrafast switching
- No reverse-recovery charge
- Capable of reverse conduction
- Low gate charge, low output charge
- Superior commutation ruggedness
- JEDEC qualified (JESD47, JESD22)
- Bottom-side cooled
- Zero reverse recovery loss
- Source Sense pad for optimal gate drive
- Fast, controllable fall and rise times
- RoHS 3(6+4) compliant
Benefits
- Improves system efficiency
- Improves power density
- Reduces system weight
- Enables higher operating frequency
- System cost reduction savings
- Reduces EMI
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