GS66508B-TR CoolGaN™ Transistor 650 V ≤ G3 for ultimate efficiency and reliability
Overview
The GS66508B-TR is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. The GS66508B-TR is a top-side cooled transistor in a GaNPX® package with very low junction-to-case thermal resistance for high power applications such as ACDC and DCDC converters, motor drives, on-board and off-board EV chargers, and industrial power supplies.
Summary of Features
- E-mode HEMT – normally OFF
- Ultrafast switching
- No reverse-recovery charge
- Capable of reverse conduction
- Low gate charge, low output charge
- Superior commutation ruggedness
- JEDEC qualified (JESD47, JESD22)
- Bottom-side cooled
- Zero reverse recovery loss
- Fast, controllable fall and rise times
- RoHS 3(6+4) compliant
Benefits
- Improves system efficiency
- Improves power density
- Reduces system weight
- Enables higher operating frequency
- System cost reduction savings
Support
