IGLD60R190D1

Overview

600 V CoolGaN™ e-mode power transistor for ultimate efficiency and reliability

This product is not recommended for new designs. Please explore its successor IGLD65R140D2

The IGLD60R190D1 offers fast turn-on and turn-off speed, minimum switching losses and enables simple half-bridge topologies with the highest efficiency.

It is certified through an extensive GaN-specific qualification process, exceeding industry standards.

Housed in the bottom-side cooled LSON-8 (DFN 8x8) package, it enables ideal power disspation as required in modern USB-C adapter and chargers, or server and data center applications.

Summary of Features

  • E-mode HEMT – normally OFF switch
  • Ultra fast switching
  • No reverse-recovery charge
  • Capable of reverse conduction
  • Low gate charge, low output charge
  • Superior commutation ruggedness
  • JEDEC qualified (JESD47, JESD22)
  • Bottom-side cooled

Benefits

  • Improves system efficiency
  • Improves power density
  • Enables higher operating frequency
  • System cost reduction savings
  • Reduces EMI

Potential Applications

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