IGO60R070D1

Overview

600 V CoolGaN™ e-mode power transistor for ultimate efficiency and reliability

The IGO60R070D1 enables more compact topologies and increased efficiency at higher frequency operation.

It is certified through an extensive GaN-specific qualification process, exceeding industry standards.

Housed in the leaded SMD DSO-20-85 package, it is designed for optimal power dissipation required in modern data centers, server, telecom, renewables, and numerous other applications.

Summary of Features

E-mode HEMT – normally OFF
Ultrafast switching
No reverse-recovery charge
Capable of reverse conduction
Low gate charge, low output charge
Superior commutation ruggedness
JEDEC qualified (JESD47, JESD22)
Low dynamic R_DS(on)
Bottom-side cooled

Benefits

Improves system efficiency
Improves power density
Enables higher operating frequency
System cost reduction savings
Reduces EMI

Potential Applications

Industrial
Telecom
Datacenter SMPS based on the half-bridge topology

Videos

Training

Bi-directional converters using WBG

Infineon training bi-directional converters using WBG

Understand why to use WBG switches for bi-directional converters, the topologies used and how they function.

Click here to watch eLearning

Benefits of low inductance packages for wide bandgap semiconductors

Infineon training low inductance package for WBG semiconductors

By watching this eLearning you will:

Understand package inductance
Know why wide bandgap transistors are more susceptible to package inductance, and
Identify which Infineon package types have lower inductance

Quality

Support