1EDC60H12AH

Overview

1200 V single high-side gate driver IC with UL certified galvanic isolation, short circuit clamping and separate sink/source outputs

EiceDRIVER™ 1200 V high-side single channel gate driver IC with typical 10.0 A source and 9.4 A sink currents in a wide-body package with CT technology for IGBT Modules.

For higher isolation rating, higher current, shorter propagation delay, check out our newly released X3 Compact family, 1ED3124MU12H. The DSO-8 150mil narrow body version with great price performance ratio is also available: 1EDI60N12AF

Summary of Features

  • Recognized under UL1577 with V ISO = 3000 V for 1 s
  • 1200V coreless Transformer isolated Driver ICs
  • 6 A rail-to-rail outputs
  • 300 mil wide-body package for 8 mm creepage distance
  • Separate source/sink outputs

Every driver needs a Power supply. That’s why Infineon now also offers the EiceDRIVER™ Power 2EP1xxR family, a full-bridge transformer driver IC housed in a compact TSSOP8 pin package that provides a simple power-supply alternative to generate an asymmetric output voltage to supply isolated gate drivers.

Learn more about the transformer driver ICs

Diagrams
Videos

An Introduction to Infineon Gate Drivers

Do you want to know more about Infineon´s gate drivers? Watch our introduction video and become familiar with our product portfolio.

Galvanic isolated Gate Drivers with Protection Features

EiceDRIVER™ galvanically isolated gate drivers use the unique coreless transformer (CT) technology to provide signal transfer across the galvanic isolation. We offer short circuit protection, 100 kV/μs CMTI, active Miller clamp, soft turn off and other features, especially for driving SiC MOSFETs and GaN HEMTs.
Training

Curious to learn more about how to make your gate driver designs simpler? Join us in this training where we will show you what to consider when selecting the gate driver for your application, go through the drive circuit step by step design, provide an outline of design considerations, while also taking the schematic and layout aspects into consideration!

  • EiceDRIVER™ 1ED Compact now including X3 Compact family (1ED31xx), with up to 14 A output current, 200 kV/µs CMTI
  • Show system benefit of Miller clamp, separate output, active shutdown, short circuit clamping, 7-ns prop. delay matching
  • Perfect for CoolSiC™ SiC MOSFET and IGBT7. VDE 0884-11 & UL 1577. For solar, EV charging, industrial drive, UPS, SMPS

You will have a glimpse of the different gate driver technologies available at Infineon and their benefits.

For a better understanding we will take a look at the optimization of external gate resistors to drive MOSFETs in a given application.

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With this training, you will learn how to calculate a gate resistance value for an IGBT application, how to identify suitable gate driver ICs based on peak current and power dissipation requirements, and how to fine-tune the gate resistance value in laboratory environment based on worst case conditions.

Silicon Carbide MOSFETs bring a lot of opportunities to power electronics. However, how to achieve sufficient system benefits by using Silicon Carbide MOSFETs with suitable gate drivers? This training helps you to learn how to calculate a reference gate resistance value for your Silicon Carbide MOSFET; how to identify suitable gate driving ICs based on peak current and power dissipation requirements; and how to fine-tune the gate resistance value in laboratory environment based on worst case conditions.

  • EiceDRIVER™ isolated gate driver family use the state-of-the-art coreless transformer (CT) isolation technology
  • The CT based isolated gate driver offers higher current, lower power consumption, better CMTI and best in class propagation delay matching
  • Perfect for CoolSiC™ SiC MOSFET and IGBT7. VDE 0884-11 & UL 1577. For solar, EV charging, industrial drive, UPS, etc.

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