1EDN7136U

Overview

200 V high-side TDI gate driver IC for GaN SG HEMTs and MOSFETs

The 1EDN7136U is a single-channel gate-driver IC optimized for driving Infineon CoolGaN™ Schottky gate (SG) HEMTs, as well as other GaN SG HEMTs and Si MOSFETs. This gate driver includes several key features that enable a high-performance system design with fast-switching transistors, including Truly Differential Input (TDI), 1 A peak source and sink current, active Miller clamp, and bootstrap voltage clamp. Thanks to the TDI feature, the gate driver output state is exclusively controlled by the voltage difference between the two inputs, independent of the driver’s reference (ground) potential as long as the common-mode voltage is below 150 V (static) and 200 V (dynamic). This eliminates the risk of false triggering due to ground bounce in low-side applications, while also allowing 1EDN7136U to address even high-side applications.

Summary of Features

  • Fully differential logic input circuitry to avoid false triggering in low-side or high-side operation
  • High common-mode input voltage range (CMR) up to ± 200 V for high side operation
  • High immunity to common-mode slew rate (100 V/ns) for robust operation during fast switching transients
  • Compatible with 3.3 V or 5 V input logic
  • 1 A source/sink current capability
  • Active Miller clamp with 5 A sink capability to avoid induced turn-on
  • Active bootstrap clamping
  • Suitable for driving GaN HEMTs or Si MOSFETs
  • Qualified according to JEDEC for target applications

Benefits

  • High side driving and low side ground bounce immunity during fast switching transitions
  • Optimized switching speed without external gate resistors, by choosing from the family of 1EDN71x6x drivers
  • Induced turn-on immunity during fast switching transitions
  • Regulated bootstrap voltage, by eliminating bootstrap capacitor overcharging during dead-time

Potential Applications

Support