6EDL04I065PR 650 V three-phase gate driver with Over Current Protection (OCP), Enable (EN), Fault and Integrated Bootstrap Diode (BSD)

Overview

EiceDRIVER^TM 650 V 2^nd generation 3 phase gate driver with a typical 0.165 A source and 0.375 A sink current in TSSOP-25 package for IGBTs and MOSFETs.

Summary of Features

Infineon thin-film-SOI-technology
Maximum blocking voltage +650 V
Output current +0.165 A/-0.375 A
Integrated Bootstrap Diode
Neg. Vs immunity up to -50 V
Over current & under voltage detection
Programmable delay for fault clear time
Cross-conduction prevention

Benefits

Smallest footprint package solution
Higher efficiency
Increased reliability
Higher breakdown voltage (650 V)
Easy of design

Diagrams

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