6EDL04I06NC

Overview

600 V three-phase gate driver IC bare die with integrated bootstrap diode, over current protection, enable and fault reporting

EiceDRIVER™ 600 V three phase gate driver IC bare die for MOS-transistors and IGBTs with 0.17 A source and 0.375 A sink currents and LS-SOI technology.

Summary of Features

  • Thin-film-SOI-technology
  • Ultrafast integrated bootstrap diode
  • Maximum blocking voltage +600V
  • Separate control circuits for all six drivers
  • CMOS and LSTTL compatible input (negative logic)
  • Signal interlocking of every phase to prevent cross-conduction
  • Detection of over current and under voltage supply

Benefits

  • Space saving package
  • Improved energy efficiency

Potential Applications

 

Diagrams
Parametrics
Parametrics6EDL04I06NC
Channels 6 
Configuration Three Phase
Input Vcc   min  max 13 V   17.5 V
Isolation Type Functional levelshift
Output Current (Source) 0.17 A
Output Current (Sink) 0.375 A
Qualification Industrial
Turn Off Propagation Delay 490 ns
Turn On Propagation Delay 530 ns
VBS UVLO (Off) 9.8 V
VBS UVLO (On) 11.7 V
VCC UVLO (Off) 9.8 V
VCC UVLO (On) 11.7 V
Voltage Class 600 V
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Sales Product Name 6EDL04I06NC
OPN Info 6EDL04I06NCX1SA1
Product Status active and preferred
Infineon Package name --
Standard Package name
Order online
Completely lead free yes
Halogen free yes
RoHS compliant yes
Packing Size 1
Packing Type WAFER SAWN
Moisture Level
Moisture Packing DRY
Videos
Training

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This training features how the level-shift gate drivers work, what are negative voltage transient and how they affect level-shift gate drivers. In addition you will learn about the technology difference between Junction isolation and Infineon’s Silicon-On-Insulator technology.

Webinar: Every Switch needs a Driver - The right Driver makes a Difference

We offer a large portfolio of level shift high voltage gate drivers – silicon-on-insulator (SOI) and junction isolated (JI) technologies. Learn about the advantages of Infineon SOI gate driver: integrated bootstrap diode, Low level-shift losses, saving space and cost, and negative VS robustness.

How to choose gate driver for IGBT discretes and modules

With this training, you will learn how to calculate a gate resistance value for an IGBT application, how to identify suitable gate driver ICs based on peak current and power dissipation requirements, and how to fine-tune the gate resistance value in laboratory environment based on worst case conditions.
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