Automotive IGBT Bare Dies
Revolutionizing the future of automotive electrification - unleashing the power of Infineon's Cutting-Edge Si IGBT technology
Next-level innovation: EDT3 and RC-IGBT devices with 750 V and 1200 V voltage classes, delivering unprecedented output current for main inverter applications in low-cost and high-performance vehicles.
- Junction temperature up to 185°C
- High switching speed
- Very low VCEsat
- Very low switching losses
Unleashing performance and reliability in automotive systems
Our Automotive Si Bare Dies, unleash unrivaled performance, reliability, and flexibility in automotive applications, with exceptional high voltage and high current-carrying capabilities, efficient switching performance, and unwavering focus on ruggedness, reliability, and thermal optimization.
Customizable Si IGBT & Diode solutions
Our Si IGBT and Diode solutions offer flexibility to design and manufacture custom power modules tailored to specific application requirements, poised to transform the automotive landscape, elevating performance, efficiency, and reliability to new heights.
Infineon's third-generation chip technology for electrical drivetrain
Infineon's third-generation chip technology for electrical drivetrain is a cutting-edge 750 V IGBT and Diode technology that further enhances the energy efficiency for automotive drivetrain applications. This technology supports DC link voltages up to 470 V and has even lower switching and conduction losses compared to its predecessor. Combined with the exceptional Infineon quality, the EDT3 technology has an extremely tight parameter distribution and a positive thermal coefficient. This enables easy paralleling operation, providing system flexibility, and power scalability to the final designs.
The advanced optimization of the cell structure allows for even faster switching with high gradients. Furthermore, the rugged design avoids latch-ups and provides enhanced short-circuit protection.
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