AIKQ120N75CP2 | Infineon Automotive 750V EDT2 technology in TO247PLUS package

Overview

The automotive IGBT discrete AIKQ120N75CP2 is an EDT2 IGBT with a co-packed diode in the TO247PLUS package. The 750V EDT technology significantly improves energy efficiency and cooling efforts for high voltage automotive applications by enabling battery voltages up to 470V and safe fast switching due to increased overvoltage margins. Thus enabling high performant inverter systems.

The EDT2 technology has an extremely tight parameter distribution and a positive thermal coefficient. This enables easy paralleling operation, providing system flexibility and power scalability.

With 120A nominal current, the device is an easy drop-in solution for the AIKQ120N60CT bringing the unique EDT2 benefits to existing designs.

Summary of Features

VCE = 750 V
750 V collector-emitter blocking voltage capability
Smooth switching characteristics
Very low VCE(sat),1.30 V (typ.)
Short circuit robust
Very tight parameter distribution
Low gate charge QG
Co-packaged with fast soft recovery Emitter Controlled 3 diode
Qualified according to AEC-Q101
Increase overvoltage margin in the application
Reduction of number of paralleled devices required
Simple gate drive design
Self limiting current under short circuit condition
Low EMI signature
High reliability and operating lifetime

Benefits

Benchmark quality and switching performance for 470V Vdc systems
This TO-247PLUS package with high creepage distance fulfills automotive high voltage application requirements up to 470V Vdc.
Extremely robust design to fulfill customer’s mission profile
High switching frequencies for less switching losses and cooling effort
Paralleling allows different power class inverters to be addressed with the same product, generating power scalability and cost optimization

Potential Applications