AIKBE50N65RF5 Automotive Silicon-carbide (SiC) Hybrid Discrete 650 V in D2PAK-7L
Overview
Infineon has developed a hybrid of 650V TRENCHSTOP™ 5 AUTO fast-switching IGBT and CoolSiC™ Schottky Diode to enable a cost-efficient performance boost for fast switching automotive applications such as On-Board Charger, PFC, DC-DC.
Summary of Features
- 650 V breakdown voltage
- IC = 50 A
- Best-in-class efficiency
- Trenchstop™ 5 fast-switching IGBT
- CoolSiC™ Schottky diode G5
- Low gate charge QG
- Maximum junction temperature Tvjmax = 175°C
- Kelvin emitter connection
Benefits
- Highest reliability against environmental conditions
- Increased system efficiency
- Best performance/cost ratio for hard switching topologies
- Supporting bi-directional On-Board Charger designs
Potential Applications
Support