IGB50N65H5
Overview
650 V, 50 A IGBT with anti-parallel diode in TO-263 package
High speed 650 V, 50 A hard-switching TRENCHSTOP™ 5 in D2Pak (TO-263) package IGBT, redefines “Best-in-class” IGBT by providing unmatched performance in terms of efficiency for hard switching applications.
Summary of Features
- 650 V breakthrough voltage
- Compared to Infineon’s High Speed 3 family
- Factor 2.5 lower Qg
- Factor 2 reduction in switching losses
- 200mV reduction in VCEsat
- Co-packed with Infineon’s new Rapid Si-diode technology
- Low COES/EOSS
- Mild positive temperature coefficient VCEsat
- Temperature stability of Vf
Benefits
- Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability
- 50V increase in the bus voltage possible without compromising reliability
- Higher power density design
Diagrams
Videos
Support