IHW15N120E1
1200 V, 15 A IGBT Discrete with anti-parallel diode in TO-247 package
The Reverse Conducting E1 1200 V, 15 A RC-E IGBTs with monolithically integrated diode in a TO-247 package focusing on system efficiency and reliability for the demanding requirements of induction cooking. Low switching and conducting losses, similar to our RC-H3 family. The RC-E technology uses an IGBT with monolithically integrated reverse conduction diode to set the new benchmark for price/performance and ease-of-use in the industry. This new family offers Infineon’s proven quality in Reverse Conducting IGBTs and meets all the needs of soft switching applications, including attractive pricing compared to other general purpose IGBTs.
Summary of Features
- Low Eoff and VCE(sat)
- Designed for so switching applications
- Optimized for performance with switching frequencies from 18kHz–40kHz
- Most commonly used blocking voltage, 1200V
Benefits
- Price versus performance leader for cost-effective designs
- Low losses help designs meet energy efficiency standards
- Drop-in replacement for existing designs
- Soft switching for good EMI behavior