IKY40N120CH3

Overview

1200 V, 50 A IGBT with anti-parallel diode in TO-247PLUS package

Hard-switching 1200 V, 50 A HighSpeed 3 H3 in TO-247PLUS 4pin package. Higher current capability, improved thermal behaviour, extended C-E creepage are the key features of the TO-247PLUS package. The 4pin package configuration provides ultra-low inductance to the gate-emitter control loop with the 4pin package directly to the gate driver and allows for reduction the both of E on and E off losses amounting up to 20% lower total switching losses E ts.

Summary of Features

  • Extremely low control inductance loop with extra emitter pin for driver feedback
  • 20% reduction in total switching losses compared to 3pin package using same technology
  • Up to 75 A 1200 V IGBT co-packed with 75 A diode in TO-247 footprint

Benefits

  • Highest efficiency with lowest switching losses 1200 V IGBT
  • High power density 1200V discrete IGBT
  • Lower thermal resistance R th(jh) and improved by ~15% heat dissipation capability of TO-247PLUS vs TO-247
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