IKY75N120CH7 1200 V, 75 A IGBT with anti-parallel diode in TO247PLUS 4pin package
Overview
Hard-switching 1200 V, 75 A TRENCHSTOP™ IGBT7 H7 discrete in TO-247PLUS-4pin package has been developed to fulfill the demand in applications focusing on decarbonization such as solar photovoltaic, uninterruptible power supplies and battery chargers.
Summary of Features
- Excellent Vce(sat) behavior thanks to the famous Infineon TRENCHSTOP™ technology
- Fast switching behavior with low EMI emissions
- Optimized diode for target applications, very soft and low Qrr
- Low gate resistor selection possible (down to 5 Ω) whilst maintaining excellent switching behavior
- Offering Tj(max) of 175 °C
Benefits
- Technology with the highest power density with up to 140 A rating
- Optimized performance in application conditions
- Lowest conduction losses
- Lowest switching losses
- Humidity robustness under harsh environment
- Improved EMI performance
- Highest power density with heat dissipation capability of TO-247PLUS vs TO-247
- Kelvin emitter pin brings additional reduction of total switching losses compare to 3 pin
Applications
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Diagrams
Parametrics
Parametrics | IKY75N120CH7 |
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Eoff (Hard Switching) | 4.15 mJ |
Eon | 3.1 mJ |
IC (@ 25°) max | 83 A |
IC (@ 100°) max | 75 A |
ICpuls max | 300 A |
IF max | 78 A |
IFpuls max | 300 A |
Irrm | 130 A |
Ptot (@ TA=25°C) max | 549 W |
Package | TO247-4-PLUS |
QGate | 550 nC |
Qrr | 7290 nC |
RG | 5.3 Ω |
RGint | - |
Switching Frequency min max | 16 kHz 100 kHz |
Technology | TRENCHSTOP™ IGBT7 |
VCE(sat) | 2 V |
VCE max | 1200 V |
VF | 2.5 V |
VGE(th) | 5.5 V |
td(off) | 446 ns |
td(on) | 40 ns |
tf | 111 ns |
tr | 18 ns |
Parametrics | IKY75N120CH7 |
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Documents
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IKY75N120CH7
EN
01_20 | 2023-07-03 | pdf | 1.6 MB
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Optimizing layout for paralleling power discrete semiconductor devices
EN
01_00 | 2024-11-01 | pdf | 2.2 MB
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Introduction to Infineon’s simulation models for IGBTs and silicon diodes in discrete packages
EN
01_02 | 2022-05-17 | pdf | 2.8 MB
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Discrete IGBT Datasheet Explanation
EN
01_00 | 2015-09-18 | pdf | 1.7 MB
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PQR - IKY75N120CH7
EN
01_00 | 2023-02-02 | pdf | 120 KB
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FIT Report - IKY75N120CH7
EN
02_00 | 2024-08-26 | pdf | 24 KB
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IGBT-basic know-how - IGBT: how does an Insulated Gate Bipolar Transistor work?
EN
01_00 | 2020-02-21 | pdf | 983 KB
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Infineon EiceDRIVER™ gate driver ICs selection guide
EN
CN
02_00 | 2022-05-04 | pdf | 13 MB
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5 Decisive values of discrete TRENCHSTOP™ IGBT7 family
EN
02_00 | 2024-09-04 | pptx | 25.9 MB
Order
Sales Product Name | IKY75N120CH7 |
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OPN Info | IKY75N120CH7XKSA1 |
Product Status | active and preferred |
Infineon Package name | PG-TO247-4 |
Standard Package name | |
Order online | |
Completely lead free | yes |
Halogen free | yes |
RoHS compliant | yes |
Packing Size | 240 |
Packing Type | TUBE |
Moisture Level | NA |
Moisture Packing | NON DRY |
Sales Product Name | IKY75N120CH7 |
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