TRENCHSTOP™ 5 S5

Overview

S5 Technology: Medium speed switching IGBT with full rated current diode

Developed with the customer in mind - S5 is a IGBT family addressing applications switching between 10 kHz and 40 kHz to deliver high efficiency, faster time to market cycles, circuit design complexity reduction and PCB bill of material cost optimization.

Related information about other products in this family

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Highlights

The TRENCHSTOP™ 5 S5 family is packed with features to help the designers achieve their goals without the need to increase circuit complexity.

Static behavior - mild positive temperature coefficient V_CE(sat), meaning paralleling is no problem and efficiency isn’t compromised during high temperature operation. At 175°C, typical V_CE(sat) is a low 1.6 V.
Dynamic behavior – single gate resistance selection for turn-on/turn-off due to the smooth switching behavior. Clean gate signals, low dv/dt, low and very symmetrical voltage overshoot.

Key features	Key benefits	Application
Very low V_CE(sat) of 1,35 V at 25°C, 20% lower than TRENCHSTOP™ 5 H5 I_C(n) = 4x nominal current (100°C T_c) Soft current fall characteristic with no tail current Symmetrical, low voltage overshoot Gate voltage under control (no oscillation). No risk of unwanted turn-on of device and no need for gate clamping Maximum junction temperature T_vj=175°C. Qualified according to JEDEC standards	V_CE(peak)clamping circuits not required Suitable for use with single turn-on/-off gate resistor No need for gate clamping components Gate drivers with Miller clamping not required Reduction in the EMI filtering needed Excellent for paralleling	Energy Storage UPS Industrial heating and welding Solar
Lower switching losses with Kelvin Emitter TO-247 4pin package	More than 20% reduction of the switching losses Higher efficiency Higher power output	Energy Storage UPS Solar

Key features

Key benefits

Application

Very low V_CE(sat) of 1,35 V at 25°C, 20% lower than TRENCHSTOP™ 5 H5
I_C(n) = 4x nominal current (100°C T_c)
Soft current fall characteristic with no tail current
Symmetrical, low voltage overshoot
Gate voltage under control (no oscillation). No risk of unwanted turn-on of device and no need for gate clamping
Maximum junction temperature T_vj=175°C.
Qualified according to JEDEC standards