DD450S45T3E4_B5 4500 V, 450 A Diode IGBT module

Overview

XHP™ 3 4500 V, 450 A diode IGBT module with Emitter Controlled E4 Diode and enhanced isolation of 10.4 kV. Predestined to be combined with IGBT module FF450R45T3E4_B5

Summary of Features

  • High DC stability
  • High short-circuit capability
  • High surge current capability
  • Unbeatable robustness
  • Tvj op=150°C
  • AlSiC base plate for increased TC
  • Package with CTI > 600
  • Fire & smoke EN45545 R22, R23, R24: HL2

Benefits

  • Low inductive module
  • Enables clean electrical design
  • Enables clean mechanical design
  • Easy set-up of 3-level NPC1 topology
  • Easy set-up of parallel configuration
  • Better scalability, on smaller steps
  • Better match to various power levels
  • Smoother logistic handling and stocking
  • Enables downsizing on system level
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