FZ1800R45HL4_S7 4500 V, 1800 A single switch IGBT module

Overview

IHV-B 4500 V, 1800 A 190 mm single switch IGBT Module with Trench/Fieldstop IGBT4, Emitter Controlled 4 diode and isolated AlSiC Base Plate - The best solution for your HVDC application. 

In comparison to the standard type the _S7 type can be driven with VGE=25 V instead of the usual 15 V

Summary of Features

  • Lowest static losses
  • Highest dynamic robustness
  • High short circuit capability, self-limiting short circuit current
  • Low VCEsat with positive temperature coefficient
  • Gate emitter voltage of 25 V

Benefits

  • Unbeatable robustness
  • First module to enable 1.4 GW HVDC Plants at 320 kV w/o paralleling
  • 10% lower energy loss penalties possible (compared to the next best alternative)
  • Standardized housing eases design and maintenance
Diagrams
Parametrics
ParametricsFZ1800R45HL4_S7
Configuration Single switch
Dimensions (width) 140 mm
Dimensions (length) 190 mm
Features VGE = 25 V
Housing IHV B
IC(nom) / IF(nom) 1800 A
IC   max 1800 A
Qualification Industrial
Technology IGBT4 - L4
VCE(sat) (Tvj=25°C typ) 2.15 V
VCES / VRRM 4500 V
VF (Tvj=25°C typ) 2.6 V
Voltage Class   max 4500 V
ParametricsFZ1800R45HL4_S7
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Sales Product Name FZ1800R45HL4_S7
OPN Info FZ1800R45HL4S7BPSA1
Product Status active and preferred
Infineon Package name AG-IHVB190
Standard Package name
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Completely lead free no
Halogen free no
RoHS compliant yes
Packing Size 1
Packing Type TRAY
Moisture Level 1
Moisture Packing NON DRY
Sales Product Name FZ1800R45HL4_S7
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