P2000DL45X168 4500 V, 2000 A Press Pack IGBT

Overview

The Press Pack IGBT offers 2000 A with internal freewheeling diode using Infineon Trench 4.5 kV IGBT chips.

Summary of Features

  • Behavior in case of a failure
  • Hermetically sealed housing
  • Cooling of the device
  • Stack Design

Benefits

  • Full long term short-on-fail
  • Explosion proofed housing
  • Highest power cycling capability
  • Double side cooling
  • Wide range of clamping force
Diagrams
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