AUIRFS4010-7P

Overview

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.  Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Summary of Features

  • Advanced Process Technology
  • Ultra Low On-Resistance
  • Enhanced dV/dT and dI/dT capability
  • 175°C Operating Temperature
  • Fast Switching
  • Repetitive Avalanche Allowed up to Tjmax
  • Lead-Free, RoHS Compliant
  • Automotive Qualified
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