IAUMN04S7N005G 250 A, 40 V, Automotive Power MOSFET with OptiMOS™-7 Technology
Overview
Infineon's reliable and robust Automotive Power MOSFET: IAUMN04S7N005G is a high-performance, N-channel OptiMOS™ power MOSFET designed for demanding automotive applications. With an extended qualification beyond AEC-Q101, enhanced electrical testing, and a robust design, this device ensures reliable operation in harsh environments. It has an operating temperature range of -55 to 175°C, MSL2 up to 260°C peak reflow, and 100% avalanche testing, so it's ideal for general automotive applications.
Summary of Features
- Low RDS(on) in 8x8 mm2
- High Avalanche capability
- High SOA ruggedness
- Fast switching times (on/off)
- Leadless Packages w/ Cu-Clip
- Thin wafer Cu-technology
- 300 mm in-house production
- Gullwing package w/ long leads
Benefits
- High power density in 8x8
- Increased current capability
- Improved design ruggedness
- Good switching performance
- efficient cooling in 8x8m mm2
- Automotive quality package
- Automotive quality production
- High TCOB performance on IMS
Potential Applications
- Automotive BLDC drives
- Zonal architecture switches
- Battery disconnect
- Power distribution
Training
- OptiMOS™ 7 40 volts is Infineon’s new automotive MOSFET technology.
- It presents a 25 percent Ron improvement when compared to the previous OptiMOS™ 6.
- Get to know today`s fast growing automotive MOSFET market.
- Know more about Infineon`s wide MOSFET selection for 48 V mild-hybrid electric vehicle, or MHEV, applications.
- Learn how Infineon defines a true culture of quality.
- Get to know Infineon`s Zero Defect approach and how Infineon goes beyond the requiriments when it comes to automotive MOSFET qulification.
- Get to know Infineon’s Automotive MOSFET data sheet.
- Improve your understanding of the parameters and diagrams in the document, which will help you better evaluate the device’s limits and capabilities.
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