MOSFET Modules (Si/SiC) Power MOSFET modules in different technologies qualified for a varity of application
AQG324 qualified EasyPACKTM incorporates the latest features of CoolMOS™ CFD7A 650 V and integrated DC-Snubber, which is a perfect fit for a cost-performance combination for on-board charger and EV-Aux applications. With increasing trend towards power density and efficiency for EV, Easy modules with it’s flexibility and compact size bridges this gap while offering the best cost performance ratio on system level.
Our CoolSiC™ Silicon Carbide MOSFET power modules are available in many different configurations. The 1200 V and 2000 V SiC MOSFET modules offer a superior gate-oxide reliability enabled by state-of-the-art trench design, best-in-class switching and conduction losses.
Infineon offers a wide range of CoolSiC™ MOSFET automotive power modules for hybrid and electric vehicles applications: traction inverter (to convert the DC from the high voltage battery to AC for the electric motors), on-board battery charger, auxiliary inverters, HV/LV DC-DC converter and specific Fuel-Cell Electric Vehicles (FCEV) applications such as the fuel cell air compressor and DC-DC boost converter.
This video highlights the benefits of CoolSiC™, as seen through the eyes of our customers. Featuring testimonials from alpitronic, Tritium, Lite-On, Siemens Mobility, and Fronius, we see how SiC is driving innovation in energy generation, storage, and consumption.
This training will introduce you to the gate oxide reliability of CoolSiC™ MOSFETs and how Infineon's design enables the effective screening of defects by opting for a trench MOSFET.
Additionally, you will understand how this decision has allowed Infineon to achieve high reliability that surpasses that of mature silicon technology without negatively impacting key performance parameters.
Discover the benefits and challenges associated with connecting SiC power MOSFETs in parallel.
This training will show you what makes CoolSiC™ the perfect choice for UPS applications.
This training covers the properties of Silicon Carbide which change the way how an inverter is designed compared to Si-chips. With that in mind, we explain SiC specific degradation mechanisms and how to ensure that SiC devices survive in the application, considering these special failure modes, by applying the reliability tests Infineon developed. These are internally mandatory for SiC device qualifications to ensure better quality, safety, and reliable device performance for years.
Driving a CoolSiC™ MOSFET is much easier than you think. This training will show you how it can be driven with a 0 V turn-off gate voltage.
