CoolMOS™ Packages
Revolutionary CoolMOS™ superjunction MOSFET technologies require innovative package solutions to enable tomorrow's trends
Low power applications are typically sold into the price sensitive consumer world where customers are closely looking into bill of material (BOM) cost savings. To allow savings, Infineon offers special package features that avoid additional assembly treatments on the customer's side as well as smaller packages, enabled by our outstanding CoolMOS™ superjunction technology.
High power applications are very performance oriented. To further improve efficiency and thermal behavior, even by considering smaller form factors, Infineon introduced packages with Kelvin Source functionality and with D-DPAK, the first top side cooled SMD package. Combine the benefits of the high voltage technologies 600 V CoolMOS™ G7 superjunction (SJ) MOSFET and CoolSiC™ Schottky diode 650 V G6 with the innovative concept of top-side cooling in D-DPAK.
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What is the purpose of 200-300 V StrongIRFET™ devices?
Infineon’s latest 200-300 V StrongIRFET™ devices are optimized for both high current and low RDS(on) making them the ideal solution for industrial applications. The flagship IRF200P222 offers a 40 percent increase in current carrying capability and 32 percent lower RDS(on) when compared to previous generation devices leading to increased power density and reduction in I2R losses.
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What is the new TRENCHSTOP™ advanced isolation?
It is a Fully isolated TO-247 package with industry leading IGBTs. This new package concept is able to match the highest requirements in terms of performance, design flexibility and ease of handling. By eliminating the need for thermal grease or thermal interface sheets the TRENCHSTOP™ Advanced Isolation is able to deliver at least 35% lower thermal resistivity and at least 10% system cost reduction, helping designers to lower system complexity, development time, and assembling costs. Within the first wave we are launching four IGBTs with TRENCHSTOP™ HighSpeed 3 technology and one Rapid switching 650 V emitter controlled diode.
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Fixed frequency flyback controller and CoolSET™ 5th generation
The 5th generation fixed frequency CoolSET™ offers high performance with the integration of the latest 700 V and 800 V CoolMOS™ P7 families in both DIP-7 and DSO-12 packages. To further enhance the efficiency performance, frequency reduction operation has been implemented to achieve higher efficiency with lower switching frequency at mid and light load condition. In addition, for low AC line input operation, CCM (Continuous Current Mode) operation has been implemented to achieve lower conduction losses, thereby achieving a higher efficiency to meet international regulatory standards. To further reduce BOM count and cost of a non-isolated flyback design, an integrated error amplifier is integrated to allow a direct feedback from the primary output with minimal components and complexity.
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HEXFET™ variation total gate charge with temperature
The gate charge is a function of the die geometry, i.e. die area and thickness of the gate dielectric. These are very stable parameters. Therefore the dependency of the gate charge Q[G] on the temperature can be neglected.
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175°C package of OptiMOS™ 5 Power MOSFETs in SuperSO8: Advantages?
*Higher reliability: the 175°C TJ_MAX offers a longer lifetime at the same operating junction temperature
*Higher temperature operation: the 175°C TJ_MAX offers more power at a higher operating junction temperature
*Highest system reliability
*Thermal robustness
*Highest efficiency and power density
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