IPAN60R180CM8

Overview

IPAN60R180CM8 600 V CoolMOS™ 8 power transistor

The 600 V CoolMOS™ 8 SJ MOSFETs series is the successor to the 600 V CoolMOS™ 7 MOSFET family including P7, S7, CFD7, C7 (G7) and PFD7.

It comes with reduced gate charge (Qg) of 20% over CFD7, reduction in turn-off losses (Eoss) is further improved by 12% over CFD7, reverse recovery charge (Qrr) is 3% lower compared to the CFD7, as well as the lowest reverse recovery time (trr) in the market.

Summary of Features

  • Best-in-class RDS(on)*A
  • Significant reduction of losses
  • Excellent commutation ruggedness
  • Integrated fast body diode
  • .XT interconnection
  • ESD protection
  • TO220 FullPAK narrow lead package

Benefits

  • Increased power density
  • Ease of use and fast design-in
  • Low ringing tendency
  • Simplified thermal management
  • Simplified portfolio

Potential Applications

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