IQDH88N06LM5SC
Overview
OptiMOS™ power MOSFETs 60 V in PQFN 5x6 Source-Down DSC package with industry-leading RDS(on).
The power MOSFET IQDH88N06LM5SC comes with a low RDS(on) of 0,86 mOhm combined with outstanding thermal performance for easy power loss management. Moreover, with the dual-side cooling package five times more power can be dissipated compared to the overmolded package.
This enables higher system efficiency and power density for a large variety of end applications.
Summary of Features
- Cutting edge 60 V silicon technology
- Outstanding FOMs
- Improved thermal performance
- Ultra-low parasitics
- Maximized chip/package ratio
Benefits
- Minimized conduction losses
- Reduced voltage overshoot
- Increased maximum current capability
- Fast switching
- Less device paralleling required
- Lowest RDS(on) on a 5x6 footprint
- Improved thermal performance
- Easy thermal management
- Best switching performance
- Industry-standard package
Support
