IQE006NE2LM5
OptiMOS™ 25V low-voltage power MOSFET in PQFN 3.3x3.3 Source-Down package with industry leading RDS(on).
The innovative Source-Down OptiMOS™ low-voltage power MOSFET 25V (IQE006NE2LM5) comes in a PQFN3.3x3.3 package size, making it easy to use in the same PCB routing as the Drain-Down solution. In the same package outline of 3.3x3.3mm, the new Source-Down shows an industry benchmark RDS(on) by reducing the current standard RDS(on) of about 30 percent. In addition Source-Down shows a significant shrink of form factor. The same performance as a 5x6mm SuperSO8 is now achievable in a PQFN3.3x3.3 to use the PCB real estate more efficiently. Source-Down also offers a better transfer of power losses which means a superior thermal management. Overall the new and innovative Source-Down technology enables higher system efficiency and power density in the end application. This is especially necessary in drives, telecom, SMPS and server.
Summary of Features
- RDS(on) reduction up to 30 percent depending on the voltage class
- Superior thermal management option
- Optimized layout possibilities
- Two footprint versions available
Benefits
- Higher current capability
- Highest power density and performance
- Shrink of form factor
- Same performance as Super SO8 in a smaller package
- Optimized PCB parasitics
- Decrease of RthJA and RthJC
- Better transfer of power losses
- Supports double side cooling (exposed clip)
- Source-Down is easy to adapt on existing PCB
- Center-Gate option enables optimized parallelization
Potential Applications
