IQE022N06LM5CGSC
OptiMOS™ 5 power MOSFET 60 V logic level in PQFN 3.3x3.3 Source-Down Center-Gate DSC package
IQE022N06LM5CGSC is Infineon’s new best-in-class OptiMOS™ 5 power MOSFET 60 V logic level in a PQFN 3.3x3.3 Source-Down Center-Gate (CG) dual-side cooling (DSC) package, offering the industry’s lowest on-state resistance RDS(on) at 25˚C , superior thermal performance, and optimized parallelization. The OptiMOS™ Source-Down is a revolutionary design with a flipped silicon die inside, which offers several advantages, such as increased thermal capability, advanced power density and improved layout possibilities. Combined with the innovative dual-side cooling package, which can dissipate up to three times more power than the traditional overmolded package, IQE022N06LM5CGSC is targeted for high power density and performance SMPS products commonly found in telecom and data servers.
Summary of Features
- Logic level allows lower Qrr and QOSS, and easier gate driver selection
- Reduced RDS(on) by up to 30% compared to current technology
- Improved RthJC over current PQFN package technology
- New, optimized layout possibilities
- Center-Gate package specifically optimized for parallelization
Benefits
- Enabling highest power density and performance
- Superior thermal performance
- Optimized layout possibilities for efficient use of real-estate
- Simplifying parallel configuration of multiple MOSFETs
Potential Applications
