IQE046N08LM5
OptiMOS™ 5 power MOSFET 80 V logic level in PQFN 3.3x3.3 Source-Down package
IQE046N08LM5 is Infineon’s new best-in-class OptiMOS™ 5 power MOSFET 80 V logic level in PQFN 3.3x3.3 Source-Down package, offering the industry’s lowest on-state resistance RDS(on) at 25˚C and superior thermal performance. The OptiMOS™ Source-Down is a revolutionary technology with a flipped silicon die inside, offering several advantages such as better thermal capability, higher power density and improved layout possibilities. Combined with industrial standard PQFN 3.3x3.3 package, IQE046N08LM5 is targeted for high power density and performance SMPS products commonly found in telecom and data servers.
Summary of Features
- Logic level allows lower Qrr and QOSS, and easier gate driver selection
- Reduced RDS(on) by up to 30% compared to current technology
- Improved RthJC over current PQFN package technology
- Center-Gate package specifically optimized for parallelization
Benefits
- Enabling highest power density and performance
- Superior thermal performance
- Optimized layout possibilities for efficient use of real-estate
- Simplifying parallel configuration of multiple MOSFETs
Potential Applications
