IQE220N15NM5CG
Overview
OptiMOS™ 5 low-voltage power MOSFET 150 V in PQFN 3.3x3.3 Source-Down Center-Gate package
The IQE220N15NM5CG is part of the Source-Down family with an RDS(on) of 22 mOhm. The Source-Down technology introduces a flipped silicon die, which is positioned upside down inside of the components.
It offers increased thermal capability and improved power density and layout possibilities. The new technology can be found in two different footprints Standard-Gate and Center-Gate (optimized for parallelization).
Summary of Features
- RDS(on) of 22 mOhm
- Better RthJC compared to PQFN packages
- Center-gate footprints available
- New, optimized layout possibilities
Benefits
- Highest power density and performance
- Superior thermal performance
- Efficient use of real-estate
- Center-Gate for ideal parallelization
- Improved PCB losses
- Reduced parasitics
Potential Applications
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