IQE220N15NM5CGSC

Overview

OptiMOS™ 5 low-voltage power MOSFET 150 V in PQFN 3.3x3.3 Source-Down Center-Gate DSC package

The IQE220N15NM5CGSC is part of the Source-Down family with an RDS(on) of 22 mOhm. The Source-Down technology introduces a flipped silicon die, offering increased thermal capability, improved power density and layout possibilities.

The dual-side cooling package dissipates three times more power than to the overmolded package. The new technology can be found in two different footprints Standard-Gate and Center-Gate (optimized for parallelization).

Summary of Features

  • RDS(on) of 22 mOhm
  • Better RthJC compared to PQFN packages
  • Center-gate footprints available
  • New, optimized layout possibilities

Benefits

  • Highest power density and performance
  • Superior thermal performance
  • Efficient use of real-estate
  • Center-Gate for ideal parallelization
  • Improved PCB losses
  • Reduced parasitics

Potential Applications

Support