IRF7580M
Overview
Benefits
- Optimized for broadest availability from distribution partners
- Product qualification according to JEDEC standard
- Optimized for 10 V gate-drive voltage (called normal level)
- Silicon optimized for applications switching below <100 kHz
- Softer body-diode compared to previous silicon generation
- Dual-side cooling capability
- Low package height of 0.7 mm
- Low parasitic (1-2 nH) inductance package
- 100% lead-free (no ROHS exemption)
60V Single N-Channel HEXFET Power MOSFET in a DirectFET ME Package
Benefits
- Optimized for broadest availability from distribution partners
- Product qualification according to JEDEC standard
- Optimized for 10V gate-drive voltage (called Normal level)
- Silicon optimized for applications switching below <100KHz
- Softer body-diode compared to previous silicon generation
- Dual-side cooling capability
- Low package height of 0.7mm
- Low parasitic (1-2 nH) inductance package
- 100% lead-free (No RoHS exemption)
Quality
Support