ISZ080N10NM6
OptiMOS™ 6 power MOSFET 100 V Normal Level in PQFN 3.3x3.3 package
ISZ080N10NM6 OptiMOS™ 6 100 V in normal level is setting the new technology standard in the field of discrete power MOSFETs. Infineon’s latest OptiMOS™ 6 MOSFET technology at 100 V utilizes a proprietary trench technology that enables higher power density, efficiency and ruggedness. Compared to alternative products, Infineon’s leading thin wafer technology is enabling significant performance benefits.
Infineon’s OptiMOS™ 6 industrial power MOSFET 100 V is designed for high switching frequency application such as telecom and server power supply, but also the ideal choice for other applications such as solar, power tools and drones.
In PQFN 3.3x3.3 package it achieves ~20% improvements in on-state resistance (RDS(on)) and 30% better figure of merits (FOM - RDS(on) x Qg and Qgd) compared to the previous technology OptiMOS™ 5. This enables designers to increase efficiency, allowing easier thermal design and less paralleling, leading to system cost reduction.
Summary of Features
Compared to OptiMOS™ 5, the new technology achieves:
- ~20% lower RDS(on)
- 30% improved FOMg and 40% better FOMgd
- Lower and softer reverse recovery charge (Qrr)
- Ideal for high switching frequency
- MSL 1 classified according to J-STD-020
- 175 °C junction temperature rating
- High avalanche energy rating
- Pb-free lead plating
- RoHS compliant
Benefits
- Low conduction losses
- Low switching losses
- Fast turn on and off
- Less paralleling required
- Robust reliable performance
- Environmentally friendly
- Less paralleling required
Potential Applications
