ISZ106N12LM6
Overview
OptiMOS™ 6 power MOSFET logic level 120 V in PQFN 3.3 x 3.3 package
This is a logic level 120 V MOSFET in PQFN 3.3 x 3.3 packaging with 10.6 mOhm on-resistance. ISZ106N12LM6 is part of Infineon’s OptiMOS™ 6 power MOSFET family.
Summary of Features
Compared to OptiMOS™ 3, the technology features:
- up to 58% better RDS(on)
- up to 66% better FOMg
- up to 90% better Qrr
- up to 35% better FOMoss
Benefits
- Very low on-resistance
- Very low reverse recovery charge
- Excellent gate charge x RDS(on)
- High avalanche energy rating
- 175°C junction temperature rating
- Pb-free plating
- RoHS compliant
- Halogen-free
- MSL1 classified
Potential Applications
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