ISZ157N08NM6
OptiMOS™ 6 n-channel power MOSFET 80 V in PQFN 3.3x3.3
OptiMOS™ 6 80 V - the latest power MOSFET technology setting the new industry benchmark performance with a wide portfolio offering.
Compared to the latest OptiMOS™ 5 technology, Infineon's leading thin wafer technology enables significant performance improvement, including >28% lower RDS(on) and ~40% improved FOMs in PQFN 3.3x3.3. The performance improvement enables easier thermal design and less paralleling, leading to higher system efficiency, higher power density and system cost reduction.
Infineon’s OptiMOS™ 6 80 V family is ideal for high switching frequency applications such as telecom, server and solar, and thanks to the performance improvement OptiMOS™ 6 80 V can be used also in battery powered applications as well as in battery management systems (BMS).
Summary of Features
- Benchmark performance
- RDS(on) options for best cost/performance
- Industry standard packages
- Normal level gate drive
- 175°C rated
- Industrial qualification
Benefits
- Lower conduction losses than OptiMOS™ 5
- Lower switching losses than OptiMOS™ 5
- Wide portfolio for flexible supply chain
- False turn-on immunity
- Improved power, SOA & avalanche current
- Robust reliable performance
Potential Applications
