IMBG120R034M2H CoolSiC™ MOSFET discrete 1200 V G2 in TO-263-7 package
Overview
The CoolSiC™ MOSFET discrete 1200 V, 34 mΩ G2 in a TO-263-7 (D2PAK-7L) package builds on the strengths of Generation 1 technology and enables the accelerated system design of more cost optimized, efficient, compact, and reliable solutions. Generation 2 comes with significant improvements in key figures-of-merit for both, hard-switching operation and soft-switching topologies, suitable for all common combinations of AC-DC, DC-DC, and DC-AC stages.
Summary of Features
- RDS(on) = 34 mΩ at VGS = 18 V, Tvj = 25°C
- Very low switching losses
- Overload operation up to Tvj = 200°C
- Short circuit withstand time 2 µs
- Benchmark gate threshold voltage, VGS(th) = 4.2 V
- Robust against parasitic turn on
- 0 V turn-off gate voltage can be applied
- Robust body diode for hard commutation
- .XT interconnection technology
Benefits
- Better energy efficiency
- Cooling optimization
- Higher power density
- New robustness features
- Highly reliable
Diagrams
Support
