IMDQ75R090M1H The CoolSiC™ MOSFET 750 V G1 is a highly robust SiC MOSFET for the best system performance and reliability.
Overview
The CoolSiC™ MOSFET 750 V G1 leverages more than 20 years of SiC experience in Infineon. It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling a simplified and cost effective system design for top efficiency and power density. The innovative top-side-cooling package further enhance the CoolSiC™ 750 V strengths offering more density, optimized power loop design and less system and assembly cost.
Summary of Features
- Highly robust 750 V technology
- Best-in-class RDS(on) x Qfr
- Excellent Ron x Qoss and Ron x QG
- Low Crss/Ciss together and high Vgsth
- 100% avalanche tested
- .XT interconnection technology for best-in-class thermal performance
- Cutting-edge top-side-cooled package
Benefits
- Superior efficiency in hard switching
- Enables higher switching frequency
- Higher reliability
- Withstand bus voltages beyond 500 V
- Robustness against parasitic turn
- Unipolar driving
- Best-in-class thermal dissipation
Potential Applications
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