IMZA120R020M1H
CoolSiC™ 1200 V, 20 mΩ SiC Trench MOSFET in TO247-4 package
The CoolSiC™ 1200 V, 20 mΩ SiC MOSFET in TO247-4 package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability. In comparison to traditional silicon (Si) based switches like IGBTs and MOSFETs, the SiC MOSFET offers a series of advantages. These include, the lowest gate charge and device capacitance levels seen in 1200 V switches, no reverse recovery losses of the internal commutation proof body diode, temperature independent low switching losses, and threshold-free on-state characteristic. CoolSiC™ MOSFETs are ideal for hard- and resonant-switching topologies like power factor correction (PFC) circuits, bi-directional topologies and DC-DC converters or DC-AC inverters.
Infineon’s SiC MOSFET in TO247 4-pin package reduces parasitic source inductance effects on the gate circuit enabling faster switching and increased efficiency.
Summary of Features
- Best in class switching and conduction losses
- Benchmark high threshold voltage, Vth > 4 V
- 0 V turn-off gate voltage for easy and simple gate drive
- Wide gate-source voltage range
- Robust and low loss body diode rated for hard commutation
- Temperature independent turn-off switching losses
- .XT interconnection technology for best-in-class thermal performance
Benefits
- Highest efficiency
- Reduced cooling effort
- Higher frequency operation
- Increased power density
- Reduced system complexity
This training will introduce you to how the CoolSiC™ will help to design the next generation of servo drives.
If you want to be an expert of CoolSiC™ discretes and the .XT technology, watch this video!
Driving a CoolSiC™ MOSFET is much easier than you think. This training will show you how it can be driven with a 0 V turn-off gate voltage.
With the growing market of electrical vehicles, the industry has put forward more requirements for the performance of charging piles. This e-learning will show you that the emergence of CoolSiC™ MOSFETs has improved the charging pile industry to make the EV charger smaller, faster and with higher efficiency.
This training helps you understand how to optimize devices’ behavior in their applications with Infineon’s SPICE Compact Models for CoolSiC™ MOSFETs.
In this video, you will focus on the comparison of the power handling capacity of IGBTs and SiC MOSFETs. Go through the different aspects that need to be considered when dimensioning an IGBT or a MOSFET for a certain application.
