DF16MR12W1M1HF_B67
Booster 1200 V CoolSiC™ MOSFET Module
EasyPACK™ 1B 1200 V, 33 mΩ and 2 MPPTs booster module with CoolSiC™ MOSFET enhanced generation 1, NTC and PressFIT Contact Technology
Summary of Features
- Best-in-class packages with 12 mm height
- Combination of leading edge WBG material and Easy module packages
- Very low module stray inductance
- Wide RBSOA
- 1200 V CoolSiC™ MOSFET with enhanced generation 1 trench technology
- Enlarged recommended gate drive voltage window from +15…+18 V & 0…-5 V
- Extended maximum gate-source voltages of +23 V and -10 V
- Tvjop under overload condition up to 175°C
- PressFIT pins
- Integrated NTC temperature sensor
Benefits
- Outstanding module efficiency which enables system cost advantages
- System efficiency improvement for reduced cooling requirements
- Enabling higher frequency to Increase power density
- Best cost performance ratio which leads to reduced system costs
Customers of power electronics require ever more modern, easy connection technologies, which also provide a higher reliability to meet the trends to higher temperatures and new applications.
This training covers the properties of Silicon Carbide which change the way how an inverter is designed compared to Si-chips. With that in mind, we explain SiC specific degradation mechanisms and how to ensure that SiC devices survive in the application, considering these special failure modes, by applying the reliability tests Infineon developed. These are internally mandatory for SiC device qualifications to ensure better quality, safety, and reliable device performance for years.
This training will introduce you to how the CoolSiC™ will help to design the next generation of servo drives.
With this training you will learn how to calculate a reference gate resistance value for your Silicon Carbide MOSFET, how to identify suitable gate driving ICs based on peak current and power dissipation requirements and to fine-tune the gate resistance value in laboratory environment based on worst case conditions.
