F3L11MR12W2M1HP_B19 CoolSiC™ MOSFET 3-level module 1200 V
Overview
EasyPACK™ 2B CoolSiC™ MOSFET 3-level module in NPC2 topology 1200 V, 11mΩ G1 with NTC, pre-applied thermal interface material (TIM) and PressFIT contact technology.
Summary of Features
- Best-in-class packages with 12 mm height
- Leading edge WBG material
- Very low module stray inductance
- Enhanced CoolSiC™ MOSFET Gen 1
- Enlarged gate drive voltage window
- Gate-source voltages of +23 V and -10 V
- Tvjop under overload condition up to 175°C
- PressFIT pins
- Integrated NTC temperature sensor
- Thermal Interface Material (TIM)
Benefits
- Outstanding module efficiency
- System cost advantages
- System efficiency improvement
- Reduced cooling requirements
- Enabling higher frequency
- Increase of power density
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